Publications

Master thesis (Italian)

Ph.D. Thesis

Articles published on International Journals

[69] D. McManus, S. Vranic, F. Withers, V. Sanchez-Romaguera, M. Macucci, H. Yang, R. Sorrentino, K. Parvez, S.-K. Son, G. Iannaccone, K. Kostarelos, G. Fiori, C. Casiraghi, ‘Water-based and biocompatible 2D crystal inks for all-inkjet printed heterostructures’, Nature Nanotechnology, 2017. [link]

[68] A. Kuc, T. Cusati, E. Dib, A. F. Oliveira, A. Fortunelli, G. Iannaccone, T. Heine, G. Fiori High-Performance 2D p-Type Transistors Based on GaSe Layers: An Ab Initio Study‘ Advanced Electronic Materials, p. 1600399, 2017. [pdf] [link]

[67] Pizzi Giovanni, Gibertini Marco, Dib Elias, Marzari Nicola, Iannaccone Giuseppe, Fiori Gianluca ‘Performance of arsenene and antimonene double-gate MOSFETs from first principles‘ Nature Communications, Vol. 7, 2016. [pdf] [link]

[66] Iannaccone G, Zhang Q, Bruzzone S, Fiori G ‘Insights on the physics and application of off-plane quantum transport through graphene and 2D materials‘ Solid-State Electronics, Vol. 115 B, p. 213–218, 2016. [pdf] [link]

[65] Agarwal Tarun, Sorée Bart, Radu Iuliana, Raghavan Praveen, Fiori Gianluca, Iannaccone Giuseppe, Thean Aaron, Heyns Marc, Dehaene Wim ‘Comparison of short-channel effects in monolayer MoS2 based junctionless and inversion-mode field-effect transistors‘ Applied Physics Letters, Vol. 108, 2016. [pdf] [link]

[64] Katagiri Y, Nakamura T, Ishii A, Ohata C, Hasegawa M, Katsumoto S, Cusati T, Fortunelli A, Iannaccone G, Fiori G, Roche S, Haruyama J ‘Gate-tunable atomically thin lateral MoS2 Schottky junction patterned by electron beam‘ Nano Letters, Vol. 16, p. 3788–3794, 2016. [pdf] [link]

[63] Pellegrini B, Marconcini P, Macucci M, Fiori G, Basso G ‘Carrier density dependence of 1/f noise in graphene explained as a result of the interplay between band-structure and inhomogeneities‘ Journal Of Statistical Mechanics: Theory And Experiment, Vol. 2016, 2016. [pdf] [link]

[62] Giuseppe Iannaccone, Alessandro Betti, Gianluca Fiori ‘Suppressed and enhanced shot noise in one dimensional field-effect transistors‘ Journal Of Computational Electronics, Vol. 14, p. 94–106, 2015. [pdf] [link]

[61] Bruzzone Samantha, Logoteta Demetrio, Fiori Gianluca, Iannaccone Giuseppe ‘Vertical transport in graphene-hexagonal boron nitride heterostructure devices‘ Scientific Reports, Vol. 5, 2015. [pdf] [link]

[60] Paletti Paolo, Pawar Ravinder, Ulisse Giacomo, Brunetti Francesca, Iannaccone Giuseppe, Fiori Gianluca ‘Can graphene outperform indium tin oxide as transparent electrode in organic solar cells?‘ 2D Materials, Vol. 2, 2015. [pdf] [link]

[59] Chen Ying-Yu, Sangai Amit Rogachev, Rogachev Artem, Gholipour Morteza, Iannaccone Giuseppe, Giuseppe, Fiori Gianluca, Chen Deming ‘SPICE-Compatible Model of MOS-Type Graphene Nano-Ribbon Field-Effect Transistors Enabling Gate- and Circuit-Level Delay and Power Analysis under Process Variation‘ IEEE Transactions On Nanotechnology, Vol. 14, p. 1068–1082, 2015. [pdf] [link]

[58] Demetrio Logoteta, Gianluca Fiori, Giuseppe Iannaccone ‘Graphene-based lateral heterostructure transistors exhibit better intrinsic performance than graphene-based vertical transistors as post-CMOS devices‘ Scientific Reports, Vol. 4, 2014. [pdf] [link]

[57] Gianluca Fiori, Francesco Bonaccorso, Giuseppe Iannaccone, Tomas Palacios, Daniel Neumaier, Alan Seabaugh, Sanjay K Banerjee, Luigi Colombo ‘Electronics based on two-dimensional materials‘ Nature Nanotechnology, Vol. 9, p. 768–779, 2014. [link]

[56] Qin Zhang, Gianluca Fiori, Giuseppe Iannaccone ‘On Transport in Vertical Graphene Heterostructures‘ IEEE Electron Device Letters, p. 966–968, 2014. [pdf] [link]

[55] Qin Zhang, Giuseppe Iannaccone, Gianluca Fiori ‘Two-Dimensional Tunnel Transistors Based on Bi2Se3 Thin Film‘ IEEE Electron Device Letters, Vol. 35, p. 129–131, 2014. [pdf] [link]

[54] Chanyoung Yim, Maria O’Brien, Niall Mcevoy, Sarah Riazimehr, Heiko Sch?Fer-Eberwein, Andreas Bablich, Ravinder Pawar, Giuseppe Iannaccone, Clive Downing, Gianluca Fiori, Max C Lemme, Georg S Duesberg ‘Heterojunction Hybrid Devices from Vapor Phase Grown MoS2‘ Scientific Reports, Vol. 4, 2014. [pdf] [link]

[53] Alan Paussa, Gianluca Fiori, Pierpaolo Palestri, Matteo Geromel, David Esseni, Giuseppe Iannaccone, Luca Selmi ‘Simulation of the Performance of Graphene FETs With a Semiclassical Model, Including Band-to-Band Tunneling‘ IEEE Transactions On Electron Devices, Vol. 61, p. 1567–1574, 2014. [pdf] [link]

[52] Samantha Bruzzone, Giuseppe Iannaccone, Nicola Marzari, Gianluca Fiori ‘An Open-Source Multiscale Framework for the Simulation of Nanoscale Devices‘ IEEE Transactions On Electron Devices, Vol. 61, p. 48–53, 2014. [pdf] [link]

[51] Gianluca Fiori, Daniel Neumaier, Bart N Szafranek, Giuseppe Iannaccone ‘Bilayer Graphene Transistors for Analog Electronics‘ IEEE Transactions On Electron Devices, Vol. 61, p. 729–733, 2014. [pdf] [link]

[50] B Pellegrini, G Basso, G Fiori, M Macucci, I A Maione, P Marconcini ‘Improvement of the accuracy of noise measurements by the two-amplifier correlation method‘ Review Of Scientific Instruments, Vol. 84, p. 104702-1–1-4702-11, 2013. [link]

[49] Gianluca Fiori, Bartholomaus N Szafranek, Giuseppe Iannaccone, Daniel Neumaier ‘Velocity saturation in few-layer MoS2 transistor‘ Applied Physics Letters, Vol. 103, 2013. [pdf] [link]

[48] Pino D’Amico, Paolo Marconcini, Gianluca Fiori, Giuseppe Iannaccone ‘Engineering Interband Tunneling in Nanowires With Diamond Cubic or Zincblende Crystalline Structure Based on Atomistic Modeling‘ IEEE Transactions On Nanotechnology, Vol. 12, p. 839–842, 2013. [pdf] [link]

[47] G Fiori, S Bruzzone, G Iannaccone ‘Very Large Current Modulation in Vertical Heterostructure Graphene/hBN Transistors‘ IEEE Transactions On Electron Devices, Vol. 60, p. 268–273, 2013. [link]

[46] G Fiori, S Bruzzone, G Iannaccone ‘Two dimensional Graphene/h-BCN based devices with large Ion/Ioff ratio for digital applications‘ Advances In Science And Technology, Vol. 77, p. 266–269, 2013. [link]

[45] G Fiori, G Iannaccone ‘Multiscale Modeling for Graphene-Based Nanoscale Transistors‘ Proceedings Of The IEEE, Vol. 101, p. 1653–1669, 2013. [pdf] [link]

[44] I Deretzis, G Fiori, G Iannaccone, G Piccitto, A La Magna ‘Quantum transport modeling of defected graphene nanoribbons‘ Physica E-Low-Dimensional Systems & Nanostructures, Vol. 44, p. 981–984, 2012.

[43] M D Michielis, E Prati, M Fanciulli, G Fiori, G Iannaccone ‘Geometrical Effects on Valley-Orbital Filling Patterns in Silicon Quantum Dots for Robust Qubit Implementation‘ Applied Physics Express, Vol. 5, p. 1–3, 2012. [pdf] [link]

[42] Fiori G, Betti A, Bruzzone S, Iannaccone G ‘Lateral Graphene-hBCN Heterostructures as a Platform for Fully Two-Dimensional Transistors‘ Acs Nano, Vol. 6, p. 2642–2648, 2012. [pdf] [link]

[41] P Marconcini, A Cresti, F Triozon, Fiori G, B Biel, Y-M Niquet, M Macucci, S Roche ‘Atomistic Boron-Doped Graphene Field-Effect Transistors: A Route toward Unipolar Characteristics‘ Acs Nano, Vol. 6, p. 7942–7947, 2012. [link]

[40] B N Szafranek, Fiori G, D Schall, D Neumaier, H Kurz ‘Current saturation and voltage gain in bilayer graphene field effect transistors‘ Nano Letters, Vol. 12, p. 1324–1328, 2012. [pdf] [link]

[39] Bruzzone S, Fiori G ‘Ab-initio simulations of deformation potentials and electron mobility in chemically modified graphene and two-dimensional hexagonal boron-nitride‘ Applied Physics Letters, Vol. 99, 2011. [pdf] [link]

[38] Maione Ia, Pellegrini B, Fiori G, Macucci M, Guidi L, Basso G ‘Shot noise suppression in p-n junctions due to carrier generation-recombination‘ Physical Review. B, Condensed Matter And Materials Physics, Vol. 83, p. 155309–155316, 2011. [pdf] [link]

[37] Betti A, Fiori G, Iannaccone G ‘Drift velocity peak and negative differential mobility in high field transport in graphene nanoribbons explained by numerical simulations‘ Applied Physics Letters, Vol. 99, p. 242108-1–242108-3, 2011. [pdf] [link]

[36] A Betti, G Fiori, G Iannaccone ‘Atomistic Investigation of Low-Field Mobility in Graphene Nanoribbons‘ IEEE Transactions On Electron Devices, Vol. 58, p. 2824–2830, 2011. [pdf] [link]

[35] A Betti, G Fiori, Iannaccone G ‘Strong mobility degradation in ideal graphene nanoribbons due to phonon scattering‘ Applied Physics Letters, Vol. 98, p. 212111-1–212111-3, 2011. [pdf] [link]

[34] Fiori G ‘Negative Differential Resistance in mono and bilayer graphene p-n junctions‘ IEEE Electron Device Letters, Vol. 32, p. 1334–1336, 2011. [pdf] [link]

[33] I Deretzis, Fiori G, G Iannaccone, A La Magna ‘Effects due to backscattering and pseudogap features in graphene nanoribbons with single vacancies‘ Physical Review. B, Condensed Matter And Materials Physics, Vol. 81, p. 085427 – 1–085427 – 5, 2010. [pdf] [link]

[32] I Deretzis, Fiori G, G Iannaccone, A La Magna ‘Atomistic quantum transport modeling of metal-graphene nanoribbon heterojunctions‘ Physical Review. B, Condensed Matter And Materials Physics, Vol. 82, p. 161413-1–161413-4, 2010. [pdf] [link]

[31] A Betti, Fiori G, G Iannaccone ‘Statistical Theory of shot noise in quasi-one-dimensional field-effect transistors in the presence of electron-electron interaction‘ Physical Review. B, Condensed Matter And Materials Physics, Vol. 81, 2010. [pdf] [link]

[30] Fiori G, S Lebegue, A Betti, P Michetti, M Klintenberg, O Eriksson, G Iannaccone ‘Simulation of hydrogenated graphene field-effect transistors through a multiscale approach‘ Physical Review. B, Condensed Matter And Materials Physics, Vol. 82, p. 153404-1–153404-4, 2010. [pdf] [link]

[29] I Deretzis, G Fiori, Iannaccone G, G Piccitto, A La Magna ‘Quantum transport modeling of defected graphene nanoribbons‘ Physica E-Low-Dimensional Systems & Nanostructures, p. 5–8, 2010. [pdf] [link]

[28] Fiori G, Iannaccone G ‘On the Possibility of Tunable-Gap Bilayer Graphene FET‘ IEEE Electron Device Letters, Vol. 30, p. 261–264, 2009. [pdf] [link]

[27] A Betti, Fiori G, G Iannaccone ‘Enhanced shot noise in carbon nanotube field-effect transistors‘ Applied Physics Letters, Vol. 95, p. 252108-1–252108-3, 2009. [pdf] [link]

[26] P Palestri, C Alexander, A Asenov, V Aubry-Fortuna, G Baccarani, A Bournel, M Braccioli, B Cheng, P Dollfus, A Esposito, D Esseni, C Fenouillet-Beranger, C Fiegna, Fiori G, A Ghetti, G Iannaccone, A Martinez, B Majkusiak, S Monfray, V Peikert, S Reggiani, C Riddet, J Saint-Martin, E Sangiorgi, A Schenk, L Selmi, L Silvestri, P Toniutti, J Walczak ‘A comparison of advanced transport models for the computation of the drain current in nanoscale nMOSFETs‘ Solid-State Electronics, Vol. 53, p. 1293–1302, 2009. [pdf] [link]

[25] Fiori G, Iannaccone G ‘Ultralow-Voltage Bilayer Graphene Tunnel FET‘ IEEE Electron Device Letters, Vol. 30, p. 1096–1098, 2009. [pdf] [link]

[24] Betti A, Fiori G, Iannaccone G ‘Shot Noise Suppression in Quasi-One-Dimensional Field-Effect Transistors‘ IEEE Transactions On Electron Devices, Vol. 56, p. 2137–2143, 2009. [pdf] [link]

[23] M Cheli, G Fiori, Iannaccone G ‘Semianalytical Model of Bilayer-Graphene Field-Effect Transistor‘ IEEE Transactions On Electron Devices, Vol. 56, p. 12979–12986, 2009. [pdf] [link]

[22] P Marconcini, Fiori G, M Macucci, G Iannaccone ‘Hierarchical simulation of transport in silicon nanowire transistors‘ Journal Of Computational Electronics, Vol. 7, p. 415–418, 2008. [pdf] [link]

[21] Y Yoon, G Fiori, S Hong, Iannaccone G, J Guo ‘Performance Comparison of Graphene Nanoribbon FETs With Schottky Contacts and Doped Reservoirs‘ IEEE Transactions On Electron Devices, Vol. 55, p. 2314–2323, 2008. [pdf] [link]

[20] Fiori G, Di Pascoli S, Iannaccone G ‘Three-dimensional simulations of quantum confinement and random dopants effects in nanoscale nMOSFETs‘ Journal Of Computational And Theoretical Nanoscience, Vol. 5, p. 1115–1119, 2008. [pdf] [link]

[19] G Fiori, Iannaccone G, G Klimeck ‘Corrections to “A three-dimensional simulation study of the performance of carbon nanotube field-effect transistors with doped reservoirs and realistic geometry‘ IEEE Transactions On Electron Devices, Vol. 55, p. 1094–1095, 2008. [link]

[18] Fiori G, Iannaccone G ‘Simulation of Graphene Nanoribbon Field-Effect Transistors‘ IEEE Electron Device Letters, Vol. 28, p. 760–762, 2007. [pdf] [link]

[17] Palestri P, N Barin, D Brunel, C Busseret, A Campera, P A Childs, F Driussi, C Fiegna, Fiori G, R Gusmeroli, G Iannaccone, M Karner, H Kosina, A L Lacaita, E Langer, B Majkusiak, C Monzio Compagnoni, A Poncet, E Sangiorgi, L Selmi, A S Spinelli, And J Walczak ‘Comparison of Modeling Approaches for the Capacitance-Voltage and Current-Voltage Characteristics of Advanced Gate Stacks‘ IEEE Transactions On Electron Devices, Vol. 54, p. 106–114, 2007. [pdf] [link]

[16] Fiori G, Iannaccone G ‘Three-Dimensional Simulation of One-Dimensional Transport in Silicon Nanowire Transistors‘ IEEE Transactions On Nanotechnology, Vol. 6, p. 524–529, 2007. [pdf] [link]

[15] Fiori G, Iannaccone G, Klimeck G ‘Coupled Mode Space Approach for the Simulation of Realistic Carbon Nanotube Field-Effect Transistors‘ IEEE Transactions On Nanotechnology, Vol. 6, p. 475–480, 2007. [pdf] [link]

[14] Lisieri M, Fiori G, Iannaccone G ‘3D simulation of a silicon quantum dot in a magnetic field based on current spin density functional theory‘ Journal Of Computational Electronics, p. 191–194, 2006. [pdf] [link]

[13] Fiori G, Iannaccone G, Klimeck G ‘A Three-Dimensional Simulation Study of the Performance of Carbon Nanotube Field-Effect Transistors With Doped Reservoirs and Realistic Geometry‘ IEEE Transactions On Electron Devices, Vol. 53, p. 1782–1788, 2006. [pdf] [link]

[12] Koswatta S O, Neophytou N, Kienle D, Fiori G, Lundstrom M ‘Dependence of DC characteristics of CNT MOSFETs on bandstructure models‘ IEEE Transactions On Nanotechnology, Vol. 5, p. 368–372, 2006. [pdf] [link]

[11] Fiori G, Iannaccone G, Molas G, De Salvo B ‘Three-dimensional simulation of the dependence of the programming window of SOI nanocrystal memories on the channel width‘ IEEE Transactions On Nanotechnology, Vol. 4, p. 326–330, 2005. [pdf] [link]

[10] Fiori G, Iannaccone G ‘Code for the 3D Simulation of Nanoscale Semiconductor Devices, Including Drift-Diffusion and Ballistic Transport in 1D and 2D Subbands, and 3D Tunneling‘ Journal Of Computational Electronics, Vol. 4, p. 63–66, 2005. [pdf] [link]

[9] G Fiori, M G Pala, Iannaccone G ‘Three-dimensional simulation of realistic single electron transistors‘ IEEE Transactions On Nanotechnology, Vol. 4, p. 415–421, 2005. [pdf] [link]

[8] Fiori G, Iannaccone G, Molas G, De Salvo B ‘Dependence of the programming window of silicon-on-insulator nanocrystal memories on channel width,‘ Applied Physics Letters, Vol. 86, p. 113502-1–113502-3, 2005. [pdf] [link]

[7] Curatola G, Fiori G, Iannaccone G ‘Modelling and simulation challenges for Nanoscale MOSFETs in the ballistic limit‘ Solid-State Electronics, Vol. 48, p. 581–587, 2004. [pdf] [link]

[6] G Fiori, Iannaccone G ‘“Atomistic”, quantum and ballistic effects in nanoscale MOSFETs‘ Journal Of Computational Electronics, Vol. 2, p. 123–126, 2003. [pdf] [link]

[5] L Bonci, G Fiori, M Macucci, Iannaccone G, S Roddaro, P Pingue, V Piazza, M Cecchini, F Beltram ‘Analysis of shot noise suppression in disordered quantum wires‘ Physica E-Low-Dimensional Systems & Nanostructures, Vol. 19, p. 107–111, 2003. [pdf] [link]

[4] Fiori G, Iannaccone G ‘Modeling of ballistic nanoscale metal-oxide-semiconductor field effect transisitor‘ Applied Physics Letters, Vol. 81, p. 3672–3674, 2002. [pdf] [link]

[3] Fiori G, Iannaccone G ‘The effect of quantum confinement and discrete dopants in nanoscale 50 nm n-MOSFETs: a three-dimensional simulation‘ Nanotechnology, Vol. 13, p. 294–298, 2002. [pdf] [link]

[2] Fiori G, Iannaccone G, Macucci M ‘Modeling of Shallow Quantum Point Contacts Defined on AlGaAs/GaAs Heterostructures: The Effect of Surface States‘ Journal Of Computational Electronics, Vol. 1, p. 39–42, 2002.

[1] G Fiori, G Iannaccone, Macucci M, S Reitzenstein, S Kaiser, M Kesselring, L Worschech, A Forchel ‘Experimental and theoretical investigation of quantum point contacts for the validation of models for surface states‘ Nanotechnology, Vol. 13, p. 299–303, 2002. [pdf] [link]

Articles presented at International Conferences and contributions in book chapters

[88] D. Marian, G. Iannaccone, G. Fiori, ‘Two Dimensional Devices Based on MoS2 Lateral Heterostructures’, Proceedings of International Electron Device Meeting, San Francisco, 5-6 December, 2016.

[87] (invited) Gianluca Fiori, Giuseppe Iannaccone ‘Electronics enabled by two-dimensional materials‘ Proceedings of 2nd Sino-Italian Workshop, 2016.

[86] (invited) Fiori G, Iannaccone G ‘On the perspective of 2D materials for electronic applications‘ Proceedings of IUMRS-ICEM 2016, 2016.

[85] (invited) Fiori G. ‘Multi-scale modelling of devices based on two-dimensional materials‘ Proceedings of Workshop on Tailor-made 2D-materials and functional devices, 2016.

[84] (invited) Fiori G, Iannaccone G ‘Lateral heterostructure Field Effect Transistors‘ Proceedings of CIMTEC 2016, 2016.

[83] Cusati T, Fiori G, Fortunelli A, Iannaccone G ‘Theoretical study of metal-graphene contact resistance‘ E-MRS 2016 (Spring Meeting), 2016.

[82] Dib E. And Gibertini M. And Pizzi G. And Iannaccone G. And Marzari N. And Fiori G. ‘Arsenene and Antimonene as new candidates for next-generation devices‘ Proceedings of E-MRS 2016 (Spring Meeting), 2016.

[81] T Cusati, G Fiori, A Gahoi, V Passi, A Fortunelli, M Lemme, G Iannaccone ‘Understanding the nature of metal-graphene contacts: A theoretical and experimental study‘ 2015 IEEE International Electron Devices Meeting (IEDM), p. 12.7.1–12.7.4, 2015 IEEE International Electron Devices Meeting (IEDM), 2015. [pdf] [link]

[80] Brunetti F, Ulisse G, Dianetti M, Susanna G, Iannaccone G, Fiori G, Martin O, Neumaier D, Puicervert R, Lordan D, Burke M, Quinn A, Schmidt M, Lugli P ‘Doped and textured graphene as electrode for organic solar cells‘ IEEE NANO 2015, 2015.

[79] (invited) Fiori Gianluca, Iannaccone Giuseppe ‘2D Electronics: what can we really expect?‘ Graphene Canada 2015, 2015.

[78] Paletti Paolo, Pawar Ravinder, Ulisse Giacomo, Brunetti Francesca, Iannaccone Giuseppe, Fiori Gianluca ‘Simulation of Organic Solar Cell with Graphene Transparent Electrode‘ International Workshop on Computational Electronics 2015, Vol. 1, 2015.

[77] (invited) Fiori Gianluca, Iannaccone Giuseppe ‘The challenging promise of 2D materials for Electronics‘ IEDM 2015, 2015.

[76] Macucci M, Basso G, Fiori G, Marconcini P, Maione I A, Pellegrini B ‘Performance analysis of correlation techniques for noise measurements‘ 2015 International Conference on Noise and Fluctuations (ICNF), 2015. [link]

[75] (invited) Fiori Gianluca, S Fregonese C Maneux T Zimmer, V Di Lecce A Gnudi E Gnani S Reggiani, G Baccarani Stefano Venica Francesco Driussi Pierpaolo Palestri Luca Selmi J Dabrowski G Lippert G Lupina S Vaziri M Oestling G Ruhl Iannaccone Giuseppe Max Lemme ‘Graphene for Radio Frequency Applications: the GRADE project‘ Proceedings of EU-Korea Workshop on Nanoelectronics, 2015.

[74] Iannaccone G, Zhang Q, Bruzzone S, Fiori G ‘Relevance of the physics of off-plane transport through 2D materials on the design of vertical transistors‘ Proceedings of EUROSOI-ULIS Conference 2015, p. 89–92, Proceedings of EUROSOI-ULIS Conference 2015, 2015. [pdf] [link]

[73] (invited) Fiori G, Iannaccone G ‘2D materials-based electronics: where do we go from here?‘ Proceedings of DSL 2015, 2015.

[72] Dib E, Gibertini M, Pizzi G, Marzari N, Iannaccone G, Fiori G ‘Ab-initio simulations of two-dimensional materials-based transistors‘ Graphene Week, 2015.

[71] (invited) Fiori G, Iannaccone G ‘Evaluating the performance of 2D materials-based devices through numerical simulations‘ Proceedings of International Workshop on 2D materials and devices, 2015.

[70] Fiori G, Paletti P, Pawar R, Iannaccone G, Ulisse G, Brunetti F ‘Improving the efficiency of organic solar cells with graphene transparent electrode and light management: a simulation study‘ Proceedings of IEEE Nano 2015, 2015.

[69] (invited) Fiori G, Iannaccone G ‘Challenges and Opportunities of 2D Materials for Electronic Applications‘ Proceedings EU-NSF Workshop on 2D materials, 2015.

[68] G Fiori, D Logoteta, G Iannaccone ‘Performance assessment of graphene-based lateral and vertical heterostructure FETs‘ Proceedings Graphene 2014, 2014.

[67] (invited) Fiori G. ‘What can we expect from two-dimensional materials for electronic applications? A simulation study‘ Semicon 2014 – Europe, 2014.

[66] (invited) Fiori G. ‘Assessing the Limits of Transistors Based on two-Dimensional Materials‘ CMOS-ET 2014, 2014.

[65] (invited) Fiori G. ‘Modeling of two-dimensional material-based devices‘ Book of Abstract – 18 ISCMP, p. 22–22, 2014.

[64] D Logoteta, G Fiori, G Iannaccone ‘Optimization and benchmarking of graphene-based heterostructure FETs2014 International Workshop on Computational Electronics (IWCE)‘ 2014 International Workshop on Computational Electronics (IWCE), p. 1–3, 2014. [link]

[63] (invited) D Logoteta, Q Zhang, G Fiori ‘What can we really expect from 2D materials for electronic applications?72nd Device Research Conference‘ 72nd Device Research Conference, p. 181–182, 2014. [link]

[62] (invited) Fiori G. ‘On the perspectives of state-of-the-art graphene devices for nanoelectronics‘ Abstract Workshop “From carbon nanotubes to graphene: the key materials of the future?”, 2013.

[61] Frank Tseng, Gianluca Fiori, Avik Ghosh ‘Can we reduce the OFF currents of graphene without hurting their ON currents?‘ APS March Meeting, 2013.

[60] F Tseng, G Fiori, A W Ghosh ‘Can we engineer current saturation in narrow gap graphitic FETs without hurting mobility?71st Device Research Conference‘ 71st Device Research Conference, p. 1–2, 2013. [link]

[59] G Iannaccone, G Fiori, S Bruzzone, A Betti ‘Graphene as a material for electronics: technology exploration through modeling‘ Isophos 2013 International School on Organic Photovoltaics, 2013.

[58] G Fiori, G Iannaccone ‘Graphene-based transistors: what is good and what is not‘ E-EMRS 2013, 2013.

[57] G Fiori, G Iannaccone ‘Graphene RF design: what really matters‘ Book of Abstracts GRAPHENE 2013, 2013.

[56] Ying-Yu Chen, Artem Rogachev, Amit Sangai, Giuseppe Iannaccone, Gianluca Fiori, Deming Chen ‘A SPICE-Compatible Model of Graphene Nano-Ribbon Field-Effect Transistors Enabling Circuit-Level Delay and Power Analysis under Process VariationDesign, Automation & Test in Europe Conference & Exhibition (DATE), 2013‘ Design, Automation & Test in Europe Conference & Exhibition (DATE), 2013, p. 1789–1794, 2013. [link]

[55] (invited) G Iannaccone, G Fiori, S Bruzzone, A Betti ‘Graphene transistors and two dimensional electronics‘ Ninth International Nanotechnology Conference on Communication and Cooperation, 2013.

[54] (invited) G Fiori, G Iannaccone ‘Limits and perspectives of graphene based devices for electronic applications‘ Books of Abstract “NanotechItaly”, 2013.

[53] D Logoteta, G Fiori, G Iannaccone ‘Performance assessment of graphene-based lateral and vertical heterostructure transistors‘ Book of Abstracts Graphene 2014, 2013.

[52] Fiori G, S Bruzzone, G Iannaccone ‘Hexagonal BN/graphene heterostructures as a technological option for nextgeneration devices‘ Proceedings IWCE 2012, 2012.

[51] G Fiori, G Iannaccone ‘Insights on radio frequency bilayer graphene FETs‘ 2012 International Electron Devices Meeting, p. 17.3.1–17.3.4, 2012 International Electron Devices Meeting, 2012. [pdf] [link]

[50] (invited) G Fiori, G Iannaccone ‘Nanoscale graphene device simulations‘ 2012 CMOS Emerging Technologies Conference, 2012.

[49] P Marconcini, A Cresti, F Triozon, Fiori G, B Biel, Y -M Niquet, M Macucci, S Roche ‘Electron-hole transport asymmetry in Boron-doped Graphene Field Effect Transistors‘ Proceedings IWCE 2012, Proceedings IWCE 2012, 2012. [pdf] [link]

[48] (invited) Fiori G, G Iannaccone ‘Performance assessment of graphene based devices through a multi-scale approach‘ Proceedings Graphene 2012, 2012.

[47] Fiori G, S Bruzzone, G Iannaccone ‘Two dimensional Graphene/h-BCN based devices with large Ion/Ioff ratio for digital applications‘ Advances in Science and Technology, Vol. 77, p. 266–269, Advances in Science and Technology, 2012. [pdf] [link]

[46] (invited) G Fiori, G Iannaccone, S Bruzzone, A Betti ‘Graphene For Next-Generation Electronics: Limits And Perspectives‘ Abstract Graphene Technology: Production, Assembly and Applications, 2011.

[45] S Bruzzone, G Fiori ‘Investigation of electron-phonon interaction in hydrogenated graphene through ab-initio calculations‘ Graphene 2011, 2011.

[44] Fiori G, Betti A, Bruzzone S, D’Amico P, Iannaccone G ‘Nanodevices in Flatland: Two-dimensional graphene-based transistors with high Ion/Ioff ratio‘ Proceedings of International Electron Device Meeting, p. 259–262, Proceedings of International Electron Device Meeting, 2011. [pdf] [link]

[43] (invited) Iannaccone G, A Betti, G Fiori ‘Noise in graphene and carbon nanotube devices‘ Proceedings 21st International Conference on Noise and Fluctuations, ICNF 2011, p. 360–363, 2011.

[42] Iannaccone Giuseppe, Fiori G, Pala Marco, Reggiani Susanna ‘Beyond CMOS‘ Nanoscale CMOS, p. 443–474, 2010.

[41] A Betti, Fiori G, Iannaccone G ‘Enhanced shot noise in carbon nanotube FETs due to electron-hole interaction‘ Proceedings 14th International Workshop on Computational Electronics, p. 303–306, Proceedings 14th International Workshop on Computational Electronics, 2010. [pdf] [link]

[40] (invited) Iannaccone G, A Betti, G Fiori ‘Transport and noise properties of graphene-based transistors revealed through atomistic modelling‘ Proceedings International Conference on Simulation of Semiconductor Processes and Devices, p. 3–6, 2010. [link]

[39] (invited) G Iannaccone, Fiori G, M Cheli, P Michetti, M Macucci, A Betti, P Marconcini ‘Graphene as a Material for Nanoelectronics‘ Papers of 217th ECS Meeting, 2010.

[38] (invited) E Sangiorgi, C Alexander, A Asenov, V Aubry-Fortuna, G Baccarani, A Bournel, M Braccioli, B Cheng, P Dollfus, A Esposito, D Esseni, C Fenouillet-Beranger, C Fiegna, G Fiori, A Ghetti, Iannaccone G, A Martinez, B Majkusiak, S Monfray, P Palestri, V Peikert, S Reggiani, C Riddet, J Saint-Martin, A Schenk, L Selmi, L Silvestri, P Toniutti, J Walczak ‘Drain current computation in nanoscale nMOSFETs: Comparison of transport models‘ Microelectronics Proceedings (MIEL), 2010 27th International Conference on,, p. 3–7, Microelectronics Proceedings (MIEL), 2010 27th International Conference on,, 2010. [pdf] [link]

[37] L Leem, A Srivastava, L Shuang, B Magyari-Kope, Iannaccone G, J S Harris, Fiori G ‘Multi-scale simulation of partially unzipped CNT hetero-junction Tunneling Field- Effect Transistor‘ Proceedings IEDM Tech. Dig. 2010, p. 32.5.1–32.5.4, 2010.

[36] A Betti, G Fiori, Iannaccone G ‘Full band assessment of phonon-limited mobility in Graphene NanoRibbons‘ Proceedings IEDM Tech. Dig. 2010, p. 32.2.1 / 728–32.2.4 / 731, Proceedings IEDM Tech. Dig. 2010, 2010. [pdf] [link]

[35] Fiori G, S Lebegue, A Betti, P Michetti, M Klintenberg, D, Eriksson, Iannaccone G ‘A multi-scale approach for performance assessment of hydrogenated graphene Field-Effect Transistors‘ Proceedings 14th International Workshop on Computational Electronics, p. 299–302, Proceedings 14th International Workshop on Computational Electronics, 2010. [pdf] [link]

[34] I Deretzis, G Fiori, Iannaccone G, A La Magna ‘Quantum transport modeling of Schottky junctions between metallic contacts and pure/defected graphene nanoribbons‘ Proceedings of E-MRS 2010 Symposium, 2010.

[33] X Yang, Fiori G, Iannaccone G, K Mohanram ‘Semi-analytical model for Schottky-barrier carbon nanotube and graphene nanoribbon transistors‘ GLSVLSI 2010, GLSVLSI 2010, 2010. [pdf] [link]

[32] Iannaccone G, Fiori G, Cheli M, Michetti P, Macucci M, Betti A, Marconcini P ‘Graphene as a Material for Nanoelectronics‘ 217th ECS Meeting, 2010.

[31] P Palestri, C Alexander, A Asenov, G Baccarani, A Bournel, M Braccioli, B Cheng, P Dollfus, A Esposito, D Esseni, A Ghetti, C Fiegna, G Fiori, V Aubry-Fortuna, Iannaccone G, A Martinez, Majkusiak B, S Monfray, S Reggiani, C Riddet, J Saint-Martin, E Sangiorgi, A Schenk, L Selmi, L Silvestri, J Walczak ‘Comparison of advanced transport models for nanoscale MOSFETs, 10th International Conference on Ultimate Integration of Silicon‘ Proceedings of ULIS 2009, p. 125–128, Proceedings of ULIS 2009, 2009. [pdf] [link]

[30] P Marconcini, G Fiori, A Ferretti, G Iannaccone, M Macucci ‘Numerical Analysis of Transport Properties of Boron-Doped Graphene FETs‘ Proceedings of the 13th International Workshop on Computational Electronics, p. 85–88, Proceedings of the 13th International Workshop on Computational Electronics, 2009. [pdf] [link]

[29] (invited) Iannaccone G, Fiori G, Macucci M, Michetti P, Cheli M, Betti A, Marconcini P ‘Perspectives of Graphene Nanoelectronics: Probing Technological Options with Modeling‘ Technical Digest – International Electron Devices Meeting, p. 10.4.1–10.4.4, 2009. [link]

[28] A Betti, G Fiori, G Iannaccone ‘Physical Insights on Graphene Nanoribbon Mobility Through Atomistic Simulations‘ Technical Digest – International Electron Devices Meeting, p. 897–900, Technical Digest – International Electron Devices Meeting, 2009. [pdf] [link]

[27] Fiori G, Iannaccone G ‘Performance Analysis of Graphene Bilayer Transistors Through Tight-Binding Simulations‘ Proceeding 13th International Workshop on Computational Electronics, p. 301–304, 2009.

[26] I A Maione, G Fiori, L Guidi, G Basso, M Macucci, B Pellegrini ‘Shot Noise Suppression in p-n Junctions Due to Carrier Recombination‘ 20th International Conference on Noise and Fluctuations, Vol. 1129, p. 221–224, 2009. [link]

[25] Betti A, Fiori G, Iannaccone G ‘Shot Noise Analysis in Quasi One-Dimensional Field Effect Transistors‘ AIP Proceedings on the 20th International Conference on Noise and Fluctuations, Vol. 1129, p. 581–584, AIP Proceedings on the 20th International Conference on Noise and Fluctuations, 2009. [pdf] [link]

[24] (invited) Fiori G ‘Modeling C-based Nanotransistors‘ Transalp’Nano2008, p. 26–27, 2008.

[23] Youngki Yoon, Gianluca Fiori, Seokmin Hong, Giuseppe Iannaccone, Jing Guo ‘Effect of Disorders in Graphene Nanoribbon Field-Effect Transistors‘ Abstract of APS March Meeting 2008, 2008.

[22] A Betti, G Fiori, G Iannaccone ‘Shot Noise in Quasi One-Dimensional FETs‘ Technical Digest IEDM 2008, p. 185–188, Technical Digest IEDM 2008, 2008. [pdf] [link]

[21] Fiori G, Y Yoon, S Hong, G Iannaccone, J Guo ‘Performance comparison of graphene nanoribbon schottky barrier and MOS FETs‘ International Electron Device Meeting, p. 757–760, 2007.

[20] G Fiori, L Guidi, M Macucci, Basso G, I A Maione, B Pellegrini ‘MESFET cryogenic front-end for cross-correlation noise measurements,‘ Proceedings of the 18th International Conference on Noise and Fluctuations,, Vol. 922, p. 391–394, 2007. [link]

[19] Poli S, Fiori G, Reggiani S, Gnudi A, Iannaccone G ‘Tight-Binding Versus Effective-Mass Modeling of Carbon Nanotube FETs‘ Proceeding of the 8th International Conference on Ultimate Integration on Silicon, p. 43–46, 2007.

[18] G Fiori, L Guidi, Macucci M, G Basso, I A Maione, B Pellegrini ‘MESFET cryogenic front-end for cross-correlation noise measurements‘ Proceedings of the 19th International Conference on Noise and Fluctuations, Vol. 922, p. 391–394, 2007. [link]

[17] Fiori G, Guidi L, Macucci M, Basso G, Maione I, Pellegrini B ‘MESFET cryogenic front-end for cross-correlation noise measurements‘ International conference on Noise and Fluctuations, 2007.

[16] Fiori G, Iannaccone G ‘Threshold voltage dispersion and impurity scattering limited mobility in carbon nanotube field effect transistors with randomly doped reservoirs‘ Proceedings of the 36th European Solid State Research Conference, p. 202–205, 2006.

[15] Fiori G, Iannaccone G, Klimeck G ‘Performance of Carbon Nanotube Field Effect Transistors with Doped Source and Drain Extensions and Arbitrary Geometry‘ Technical Digest of the International Electron Device Meeting, 2005, p. 522–525, 2005.

[14] G Fiori, Iannaccone G, M Lundstrom, G Klimeck ‘Three-dimensional atomistic simulation of Carbon nanotube FETs with realistic geometry‘ Proceedings of the 35th European Solid-State Device Research Conference, p. 537–540, 2005.

[13] Fiori G, Iannaccone G ‘Simulation of One Dimensional Subband Transport in Ultra-Short Silicon Nanowire Transistors‘ Proceedings of the 6th International Conference on the Ultimate Integration of Silicon (ULIS 2005), Vol. -, p. 163–166, 2005.

[12] G Fiori, Iannaccone G ‘Code for the 3D simulation of nanoscale semiconductor devices, including drift-diffusion and ballistic transport in 1D and 2D subbands, and 3D tunneling‘ Proceedings of the International Workshop on Computational Electronics, p. 223–224, 2004.

[11] Fiori G, G Iannaccone, G Molas, B De Salvo ‘Dependence of the programming window of SOI nanocrystal memories on the channel width‘ Proceedings of IEEE Silicon Nanoelectronic Workshop, p. 97–99, 2004.

[10] Iannaccone G, G Curatola, G Fiori ‘Effective Bohm Quantum Potential for device simulators based on drift-diffusion and energy transport‘ Proceedings of the Workshop on the Simulation of Semiconductor Processes and Devices 2004,, p. 275–278, 2004.

[9] G Fiori, Iannaccone G ‘“Atomistic”, quantum and ballisticeffects in sub-100nm “well tempered” MOSFET‘ Proceedings of the International Workshop on Computational Electronic, p. 1-11–1-12, 2003. [link]

[8] Curatola G, Fiori G, Iannaccone G ‘Challenges and solutions for numerical modeling of nanoMOSFETs‘ Proceedings of the 2003 Third IEEE Conference on Nanotechnology, Vol. 2, p. 535–538, 2003.

[7] Curatola G, Fiori G, Iannaccone G ‘Modeling End-of-The-Roadmap CMOS devices‘ Proceedings of the 4th European Workshop on ULtimate Integration of Silicon, Vol. 1, p. 113–116, 2003.

[6] Fiori G, Iannaccone G, Pala M G ‘Three-dimensional simulation of Single Electron Transistors‘ IEEE-NANO 2004, 2003.

[5] Iannaccone G, G Fiori, G Curatola ‘Techniques and Methods for the Simulation of nanoscale ballistic MOSFETs‘ Proceedings of the IEEE Nanotechnology 2002, p. 193–196, 2002. [link]

[4] Iannaccone G, Fiori G, Curatola G ‘Tecniques and method for the simulation of nanoscale ballistic MOSFET‘ IEEE-NANO 2002, p. 193–196, 2002.

[3] Fiori G, Iannaccone G ‘Ballistic Modeling of 25 nm Well tempered MOSFET‘ Proceedings of the ULIS 2002, p. 115–117, 2002.

[2] Fiori G, Iannaccone G ‘Effects of quantum confinement and discrete dopants in nanoscale bulk-Si n MOSFET‘ IEEE-NANO 2001, p. 248–253, 2001.

[1] G Iannaccone, M Macucci, P Coli, G Curatola, Fiori G, M Gattobigio, M Pala ‘Towards nanotechnology computer aided design: the NANOTCAD project‘ IEEE-NANO 2001, p. 117–122, 2001.

This material is presented to ensure timely dissemination of scholarly and technical work. Copyright and all rights therein are retained by authors or by other copyright holders. All persons copying this information are expected to adhere to the terms and constraints invoked by each author’s copyright. In most cases, these works may not be reposted without the explicit permission of the copyright holder.